Performance of GaAs and silicon concentrator cells under 37 MeV proton irradiation

Conference · Wed Dec 31 23:00:00 EST 1986

OSTI ID:5494077

Curtis, H B; Swartz, C K

Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 37 MeV protons at fluences up to 2.8 x 10 to the 12th protons/sq cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150 x AMO. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short circuit current and irradiance. The cells are 5 x 5 mm with a 4-mm diameter illuminated area.

• Research Organization: National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center
• OSTI ID: 5494077
• Report Number(s): N-88-12877; NASA-TM-100144; E-3696; NAS-1.15:100144; CONF-870528-
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
ANALOG SYSTEMS
BEAMS
DIRECT ENERGY CONVERTERS
EQUIPMENT
FUNCTIONAL MODELS
GALLIUM ARSENIDE SOLAR CELLS
IRRADIATION
NUCLEON BEAMS
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
PROTON BEAMS
RADIATION EFFECTS
SILICON SOLAR CELLS
SIMULATORS
SOLAR CELLS
SOLAR EQUIPMENT
SOLAR SIMULATORS