Simple model of space radiation damage in GaAs solar cells

Technical Report · Thu Dec 01 04:00:00 EST 1983

OSTI ID:6564669

Wilson, J W; Stith, J J

A simple model is derived for the radiation damage of shallow junction gallium arsenide (GaAs) solar cells. Reasonable agreement is found between the model and specific experimental studies of radiation effects with electron and proton beams. In particular, the extreme sensitivity of the cell to protons stopping near the cell junction is predicted by the model. The equivalent fluence concept is of questionable validity for monoenergetic proton beams. Angular factors are quite important in establishing the cell sensitivity to incident particle types and energies. A fluence of isotropic incidence 1 MeV electrons (assuming infinite backing) is equivalent to four times the fluence of normal incidence 1 MeV electrons. Spectral factors common to the space radiations are considered, and cover glass thickness required to minimize the initial damage for a typical cell configuration is calculated. Rough equivalence between the geosynchronous environment and an equivalent 1 MeV electron fluence (normal incidence) is established.

• Research Organization: National Aeronautics and Space Administration, Hampton, VA (USA). Langley Research Center
• OSTI ID: 6564669
• Report Number(s): N-84-13978; NASA-TP-2242; L-15689
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
DIRECT ENERGY CONVERTERS
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
FLUX DENSITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
JUNCTIONS
MATHEMATICAL MODELS
NUCLEONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
PROTONS
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT