Equivalent electron fluence for solar proton damage in GaAs shallow junction cells

Technical Report · Sun Jan 01 04:00:00 EST 1984

OSTI ID:6032231

Wilson, J W; Stock, L V

The short-circuit current reduction in GaAs shallow junction heteroface solar cells was calculated according to a simplified solar cell damage model in which the nonuniformity of the damage as a function of penetration depth is treated explicitly. Although the equivalent electron fluence was not uniquely defined for low-energy monoenergetic proton exposure, an equivalent electron fluence is found for proton spectra characteristic of the space environment. The equivalent electron fluence ratio was calculated for a typical large solar flare event for which the proton spectrum is PHI(sub p)(E) A/E(p/sq. cm) where E is in MeV. The equivalent fluence ratio is a function of the cover glass shield thickness or the corresponding cutoff energy E(sub c). In terms of the cutoff energy, the equivalent 1 MeV electron fluence ratio is r(sub p)(E sub c) 10(9)/E(sub c)(1.8) where E(sub c) is in units of KeV.

• Research Organization: National Aeronautics and Space Administration, Hampton, VA (USA). Langley Research Center
• OSTI ID: 6032231
• Report Number(s): N-84-29324
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BARYONS
DAMAGE
DIRECT ENERGY CONVERTERS
ELEMENTARY PARTICLES
EMISSION SPECTRA
ENERGY SPECTRA
EQUIPMENT
FERMIONS
GALLIUM ARSENIDE SOLAR CELLS
HADRONS
NUCLEONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PROTONS
RADIATION EFFECTS
SOLAR ACTIVITY
SOLAR CELLS
SOLAR EQUIPMENT
SOLAR FLARES
SPECTRA