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On the validity of equivalent electron fluence for GaAs solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5379674
A simple model for particulate radiation damage in shallow-junction heteroface GaAs solar cells is used to evaluate the equivalent electron fluence concept especially in the sense of additivity of electron and proton exposure. It is found that spatial dependent factors for low-energy proton exposure results in a dose dependent equivalent fluence ratio so that additivity within the equivalent fluence concept is generally not possible.
Research Organization:
NASA Langley Research Center, Hampton, VA
OSTI ID:
5379674
Report Number(s):
CONF-820906-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English