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On the validity of equivalent electron fluence for GaAs solar cells

Conference ·
OSTI ID:6347213
;
A simple model for particulate radiation damage in shallow-junction heteroface GaAs solar cells is used to evaluate the equivalent electron fluence concept especially in the sense of additivity of electron and proton exposure. It is found that spatial dependent factors for low-energy proton exposure results in a dose dependent equivalent fluence ratio so that additivity within the equivalent fluence concept is generally not possible.
OSTI ID:
6347213
Report Number(s):
CONF-820906-
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
DIRECT ENERGY CONVERTERS
ELECTRON-NUCLEON INTERACTIONS
ELECTRON-PROTON INTERACTIONS
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
HOLES
INTERACTIONS
LEPTON-BARYON INTERACTIONS
LEPTON-HADRON INTERACTIONS
LEPTON-NUCLEON INTERACTIONS
MATHEMATICAL MODELS
PARTICLE INTERACTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SOLAR CELLS
SOLAR EQUIPMENT
TESTING
VALIDATION