Analysis of parametric drift of a MESFET-based GaAs MMIC due to 125[degrees]C storage
Conference
·
OSTI ID:6970577
Microwave parameters drifted significantly for two out of twenty- nine GaAs MESFET-based MMICs during ten weeks of storage at 125[degrees]C and 150[degrees]C. Analysis using measured, post- storage, FET characteristics and the microwave behavior indicates that all of the FETs in the MMICs drifted, most likely due to contamination.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6970577
- Report Number(s):
- SAND-92-2073C; CONF-930354--1; ON: DE93000715
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360606 -- Other Materials-- Physical Properties-- (1992-)
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELECTRICAL TESTING
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MATERIALS TESTING
MICROSTRUCTURE
NONDESTRUCTIVE TESTING
PHYSICS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE PHYSICS
TEMPERATURE DEPENDENCE
TESTING
TRANSISTORS
360606 -- Other Materials-- Physical Properties-- (1992-)
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELECTRICAL TESTING
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MATERIALS TESTING
MICROSTRUCTURE
NONDESTRUCTIVE TESTING
PHYSICS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE PHYSICS
TEMPERATURE DEPENDENCE
TESTING
TRANSISTORS