Transient response of GaAs microwave power FET to x-ray pulses

Conference · Sat Mar 31 23:00:00 EST 1984

OSTI ID:6969018

Armendariz, M G; Castle, Jr, J G

GaAs MESFETs, constructed with a 2-micron high-mobility low-conductivity VPE buffer layer, were exposed at room temperature to the x-ray pulse from a FEBETRON 705 source up to dose rates of 9 x 10/sup 10/ rad(Si)/s. Upset of the 2-GHz output signal and its recovery time depended on how well the nominal 50-ohm test circuit lines were matched to 50 ohms. Strong increases in Ids tracked the x-ray pulse, approached peak values of two times IDSS and usually showed a ten percent tail which always disappeared in microseconds. Evidence for a backgating effect was not found. No primary photocurrents could be identified.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6969018
• Report Number(s): SAND-84-0406C; CONF-840616-7; ON: DE84010145
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
EQUIPMENT
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONIZING RADIATIONS
MICROWAVE EQUIPMENT
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSIENTS
TRANSISTORS
X RADIATION