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Transient response of a small-signal microwave GaAs FET to x-rays

Conference ·
OSTI ID:6486336
; ; ;

Microwave power output of a submicron-gate GaAs FET, containing no buffer layer, is observed to recover within one hundred nanoseconds after the x-ray pulse from a FEBETRON 705 source. The FET is formed by implanting ions into the substrate, grown with a liquid encapsulated Czochralski method and doped lightly with chromium. 11 references.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA); Kaman Sciences Corp., Colorado Springs, CO (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6486336
Report Number(s):
SAND-84-0542C; CONF-840712-13; ON: DE85000066
Country of Publication:
United States
Language:
English

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Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
EQUIPMENT
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONIZING RADIATIONS
MICROWAVE EQUIPMENT
MICROWAVE RADIATION
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSIENTS
TRANSISTORS
X RADIATION