Transient response of a small-signal microwave GaAs FET to x-rays

Journal Article · Fri Nov 30 23:00:00 EST 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333561· OSTI ID:5619938

Castle, J G; Armendariz, M G; Schuster, G R; Smith, D R

Microwave power output of a submicron-gate GaAs FET, containing no buffer layer, is observed to recover within one hundred nanoseconds after the x-ray pulse from a FEBETRON 705 source. The FET is formed by implanting ions into the substrate, grown with a liquid encapsulated Czochralski method and doped lightly with chromium.

• Research Organization: Sandia National Laboratories, Albuquerque, NM 87185
• OSTI ID: 5619938
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-31:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
CHROMIUM
CRYSTAL DOPING
CRYSTAL GROWTH METHODS
CZOCHRALSKI METHOD
ELECTROMAGNETIC RADIATION
ELEMENTS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION IMPLANTATION
IONIZING RADIATIONS
METALS
MICROWAVE POWER TRANSMISSION
PHYSICAL RADIATION EFFECTS
PNICTIDES
POWER TRANSMISSION
PULSES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SUBSTRATES
TRANSIENTS
TRANSISTORS
TRANSITION ELEMENTS
X RADIATION