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Analyzing insulators by secondary-ion mass spectrometry under conditions of hydrogen inlet

Journal Article · · J. Anal. Chem. USSR (Engl. Transl.); (United States)
OSTI ID:6968685
There are some specific difficulties in analyzing insulators by secondary-ion mass spectrometry, which are primarily due to the charge accumulating on the insulator during ion bombardment. In the analysis of oxide layers, the systematic errors due to surface charge are made worse by errors due to reactive secondary-ion emission. Oxygen produces additional surface oxidation and does not eliminate the errors due to surface charging. Hydrogen is a vigorous reducing agent and is also well sorbed by semiconductors and insulators. This paper describes a method of ion microanalysis for insulators under conditions of hydrogen inlet, and analytical performance is considered. A method is proposed for analyzing massive insulators and insulatormetal (semi-conductor) structures based on admitting hydrogen to the mass spectrometer chamber during bombardment by primary argon ions.
Research Organization:
State Scientific-Research and Planning Institute for the Rare-Metal Industry
OSTI ID:
6968685
Journal Information:
J. Anal. Chem. USSR (Engl. Transl.); (United States), Journal Name: J. Anal. Chem. USSR (Engl. Transl.); (United States) Vol. 40:6, PT. 1; ISSN JACUA
Country of Publication:
United States
Language:
English