Tris(triisopropylsilyl)silane and the generation of bis(triisopropylsilyl)silylene
- Washington Univ., Saint Louis, MO (United States). Dept. of Chemistry; and others
Tris(triisopropylsilyl)silane (iPr{sub 3}Si){sub 3}SiH has been synthesized and studied by X-rah and neutron diffraction. It possesses an unusual structure in which the four silicon atoms are nearly coplanar, {angle}Si-Si-Si = 118.41(5){degree}. The Si-H distance is found to have a normal value of 1.506(2) {angstrom}. Thermal and room-temperature photochemical decomposition of (iPr{sub 3}-Si){sub 3}SiH leads to the elimination of iPr{sub 3}SiH and the generation of bis(triisopropylsilyl)silylene, [(iPr{sub 3}Si){sub 2}Si:]. Reactions of (iPr{sub 3}Si){sub 2}Si: include precedented insertions into H-Si bonds and addition to the {pi}-bonds of olefins, alkyenes, and dienes. Despite theoretical predictions of a triplet ground state for [(iPr{sub 3}Si){sub 2}Si:], stereospecific addition to cis- and trans-2-butene was observed.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States); USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 696631
- Journal Information:
- Organometallics, Journal Name: Organometallics Journal Issue: 19 Vol. 18; ISSN ORGND7; ISSN 0276-7333
- Country of Publication:
- United States
- Language:
- English
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