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Tris(triisopropylsilyl)silane and the generation of bis(triisopropylsilyl)silylene

Journal Article · · Organometallics
DOI:https://doi.org/10.1021/om990418+· OSTI ID:696631
; ;  [1]
  1. Washington Univ., Saint Louis, MO (United States). Dept. of Chemistry; and others
Tris(triisopropylsilyl)silane (iPr{sub 3}Si){sub 3}SiH has been synthesized and studied by X-rah and neutron diffraction. It possesses an unusual structure in which the four silicon atoms are nearly coplanar, {angle}Si-Si-Si = 118.41(5){degree}. The Si-H distance is found to have a normal value of 1.506(2) {angstrom}. Thermal and room-temperature photochemical decomposition of (iPr{sub 3}-Si){sub 3}SiH leads to the elimination of iPr{sub 3}SiH and the generation of bis(triisopropylsilyl)silylene, [(iPr{sub 3}Si){sub 2}Si:]. Reactions of (iPr{sub 3}Si){sub 2}Si: include precedented insertions into H-Si bonds and addition to the {pi}-bonds of olefins, alkyenes, and dienes. Despite theoretical predictions of a triplet ground state for [(iPr{sub 3}Si){sub 2}Si:], stereospecific addition to cis- and trans-2-butene was observed.
Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY
Sponsoring Organization:
National Science Foundation, Washington, DC (United States); USDOE, Washington, DC (United States)
DOE Contract Number:
AC02-98CH10886
OSTI ID:
696631
Journal Information:
Organometallics, Journal Name: Organometallics Journal Issue: 19 Vol. 18; ISSN ORGND7; ISSN 0276-7333
Country of Publication:
United States
Language:
English

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