Tris(triisopropylsilyl)silane and bis(triisopropylsilyl) silyene
Conference
·
OSTI ID:560323
- Washington Univ., St. Louis, MO (United States)
It has finally been possible to test the strategy presented in 1991 for the design of a ground-state triplet silylene: attaching to the divalent silicon atom groups sufficiently bulky to open the R-Si-R angle to a value such that the triplet silylene is lower in energy than the singlet, and lowering the electronegativity of the substituents to minimize the {open_quotes}crossover angle{close_quotes} above which the ground state is a triplet. Tris(triisopropylsilyl)silane has been synthesized as a precursor to (I-Pr{sub 3}Si){sub 2}Si:, and both thermal and photochemical dissociation to the silylene has been successful, and the multiplicity of the ground state will be reported. X-ray and neutron diffraction studies revealed novel features of (I-Pr{sub 3}Si){sub 3}SiH such as the near coplanarity of the four silicon atoms and the length of its Si-H bond.
- OSTI ID:
- 560323
- Report Number(s):
- CONF-970443--
- Country of Publication:
- United States
- Language:
- English
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