Fabrication and properties of Nb/Al, Al sub ox /Nb Josephson tunnel junctions with a double-oxide barrier

Journal Article · Wed Feb 14 23:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345579· OSTI ID:6961988

Houwman, E P; Veldhuis, D; Flokstra, J; Rogalla, H ^[1]

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1. University of Twente, Faculty of Applied Physics, P.O.B. 217, 7500 AE Enschede, The Netherlands (NL)

High-quality Nb/Al, Al{sub ox}/Nb Josephson tunnel junctions using double-oxide layers as barriers have been fabricated. The critical current density is controlled by the thickness of the second Al layer. This layer has to be oxidized completely through in order to obtain high-quality junctions. Typically, gap voltages of 2.8--3.0 mV and {ital V}{sub {ital m}} up to 70 mV at 4.2 K were obtained.

• OSTI ID: 6961988
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:4; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

426001* -- Engineering-- Superconducting Devices & Circuits-- (1990-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CRITICAL CURRENT
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
FABRICATION
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
NIOBIUM
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SUPERCONDUCTING JUNCTIONS
TEMPERATURE DEPENDENCE
TRANSITION ELEMENTS
ULTRALOW TEMPERATURE