High-quality Nb/HfO sub x -Hf/Nb Josephson junction

Journal Article · Mon Jun 15 00:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106776· OSTI ID:7034397

Morohashi, S; Imamura, T; Hasuo, S ^[1]

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1. Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi 243 (Japan)

We fabricated a niobium (Nb) Josephson junction with a hafnium (Hf) overlayer. The Hf native oxide (HfO{sub {ital x}}), formed by thermal oxidation, was used as the new tunneling barrier. Hf was selected as an overlayer because of its good affinity to Nb and strong oxygen affinity. The junction was fabricated the same way as Nb/AlO{sub {ital x}}-Al/Nb junctions. The junction showed excellent {ital I}-{ital V} characteristics ({ital V}{sub {ital m}}=40 mV and {ital V}{sub {ital g}}=3.0 mV). The critical current of the junction did not change with annealing up to 250 {degree}C.

• OSTI ID: 7034397
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 60:24; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

665412* -- Superconducting Devices-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CHALCOGENIDES
ELEMENTS
FABRICATION
HAFNIUM COMPOUNDS
HAFNIUM OXIDES
HEAT TREATMENTS
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
MIM JUNCTIONS
NIOBIUM
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE
PROXIMITY EFFECT
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
STABILITY
SUPERCONDUCTING JUNCTIONS
THERMAL DEGRADATION
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNNEL DIODES