Overdamped Josephson junctions with Nb/AlO{sub x}/Al/AlO{sub x}/Nb structure for integrated circuit application

Journal Article · Sun Jun 01 00:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119246· OSTI ID:531693

Maezawa, M; Shoji, A ^[1]

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1. Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305 (Japan)

We present characteristics of overdamped Josephson junctions consisting of Nb/AlO{sub x}/Al/ AlO{sub x}/Nb structures. The junctions were fabricated using a well-developed Nb/AlO{sub x}/Nb-junction technology and showed well-defined Josephson characteristics at 4.2 K. The characteristic voltage V{sub c} [the product of the critical current I{sub c} and the effective normal resistance R{sub n(eff)}] of junctions, which determines high-frequency performance of the junction, was in the range of 0.1{endash}0.5 mV, and the critical current density J{sub c} in the range of 10{sup 2}{endash}10{sup 4}A/cm{sup 2}. Maximum-to-minimum variations in I{sub c} over a wafer were {plus_minus}4{percent} for junctions with V{sub c}=0.15mV and {plus_minus}13{percent} for junctions with V{sub c}=0.5mV. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 531693
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CRITICAL CURRENT
INTEGRATED CIRCUITS
JOSEPHSON EFFECT
JOSEPHSON JUNCTIONS
NIOBIUM