Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

Journal Article · Sun May 01 00:00:00 EDT 1994 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.285038· OSTI ID:6958385

Neudeck, P G; Larkin, D J; Powell, J; Matus, L ^[1]; Starr, J ^[2]; Salupo, C ^[3]

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1. National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
2. Ohio Aerospace Inst., Brook Park, OH (United States)
3. Calspan Corp., Fairview Park, OH (United States)

3C-SiC ([beta]-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (< 0.5[degree] off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 [mu]m diameter circular device at 1,100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

• OSTI ID: 6958385
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:5; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices &amp; Circuits-- (1990-)
CARBIDES
CARBON COMPOUNDS
DATA
DOPED MATERIALS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FABRICATION
INFORMATION
JUNCTION DIODES
MATERIALS
NUMERICAL DATA
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON CARBIDES
SILICON COMPOUNDS
TEMPERATURE DEPENDENCE