Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

Journal Article · Sun Feb 28 23:00:00 EST 1993 · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/55.215136· OSTI ID:6338946

Neudeck, P G; Larkin, D J; Powell, J A; Matus, L G ^[1]; Starr, J E ^[2]; Salupo, C S ^[3]

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1. NASA Lewis Research Center, Cleveland, OH (United States)
2. Ohio Aerospace Inst., Brook Park (United States)
3. Calspan Corp., Middleburg Heights, OH (United States)

In this paper the authors report on the fabrication and initial electrical characterization of greatly improved 3C-SiC ([beta]-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to [minus]200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

• OSTI ID: 6338946
• Journal Information: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 14:3; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
CARBIDES
CARBON
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
FABRICATION
JUNCTION DIODES
JUNCTIONS
LEAKAGE CURRENT
NONMETALS
P-N JUNCTIONS
PERFORMANCE
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SILICON CARBIDES
SILICON COMPOUNDS
SURFACE COATING