A study of n{sup +}-6H/n-3C/p{sup +}-6H-SiC heterostructures grown by sublimation epitaxy
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- Kyoto Institute of Technology (Japan)
The n{sup +}-6H/n-3C/p{sup +}-6H-SiC structure was fabricated for the first time by sublimation epitaxy, with mesa diodes formed on its base and their electrical characteristics were studied. It was found that a green band dominates in the spectrum of injection electroluminescence (EL) of these diodes. The band is close by its parameters to that associated with free-exciton recombination in bulk 3C-SiC, but is shifted by {approx}0.06 eV to shorter wavelengths. A similar effect was observed previously for triangular quantum wells in an n{sup +}-6H-SiC/p-3C-SiC heterojunction. An analysis of the experimental data obtained demonstrated that the structure can be regarded as two independent heterojunctions. The EL spectrum observed may be associated with radiative recombination at the n{sup +}-6H-SiC/n-3C-SiC heterointerface.
- OSTI ID:
- 21088629
- Journal Information:
- Semiconductors, Vol. 40, Issue 12; Other Information: DOI: 10.1134/S1063782606120050; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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