A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- Linkoping University, Department of Physics, Chemistry and Biology (Sweden)
3C-SiC epitaxial layers with a thickness of up to 100 {mu}m were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3-0.5 cm{sup 2} and uncompensated donor concentration N{sub d} - N{sub a} {approx} (10{sup 17}-10{sup 18}) cm{sup -3} were produced at maximum growth rates of up to 200 {mu}m/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv {approx} 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices.
- OSTI ID:
- 21088108
- Journal Information:
- Semiconductors, Vol. 41, Issue 3; Other Information: DOI: 10.1134/S1063782607030037; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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