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U.S. Department of Energy
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Picosecond studies of electron transfer processes at semiconductor interfaces

Technical Report ·
OSTI ID:6957053
To study the dynamics of surface electron transfer processes, three, highly surface specific, optical probes have been developed in conjunction with semiconductor liquid junctions: surface restricted transient gratings, optically generated surface acoustic waves, and in-situ electro-optic sampling of surface space charge fields. These three optical probes have been employed to measure interfacial carrier population dynamics, interface structure and carrier thermalization, and surface transport respectively at TiO/sub 2/(001) and GaAs(100) interfaces. 3 refs., 3 figs.
Research Organization:
Rochester Univ., NY (USA). Dept. of Chemistry
DOE Contract Number:
FG02-85ER13455
OSTI ID:
6957053
Report Number(s):
DOE/ER/13455-2; ON: DE88014667
Country of Publication:
United States
Language:
English