Picosecond surface restricted transient grating studies of carrier reaction dynamics at n -GaAs(100) interfaces

Journal Article · Sun Mar 01 04:00:00 EST 1992 · Journal of Chemical Physics; (United States)

DOI:https://doi.org/10.1063/1.461848· OSTI ID:7271849

Gomez-Jahn, L A; Miller, R J.D. ^[1]

---

1. Department of Chemistry and Institute for Optics, University of Rochester, Rochester, New York 14627 (United States)

The surface restricted transient grating technique has been found to be sensitive to the Fermi level pinning surface states at the atomic interface of the native oxide layer of (100) GaAs. The sensitivity to these states is better than 10{sup {minus}4} of a monolayer. The grating signal associated with the surface states is eliminated by photoinduced removal of the oxide layer and hole transfer to Se{sup {minus}2} ions adsorbed to the surface. These results support the assignment of the signal to electronic factors associated with surface state species. The use of space charge field focusing of hole carriers to the surface has enabled a discrimination of the hole carrier reaction dynamics from those of the electron at the surface. {ital In} {ital situ} studies of interfacial hole transfer to Se{sup {minus}2} ions present at liquid junctions found the hole transfer time to be less than 30 ps. The selective quenching of the hole carrier through interfacial charge transfer has found that the hole carrier contributes to the optical dispersion in the 1 {mu} region to approximately the same extent as the electron.

• DOE Contract Number: FG02-85ER13455
• OSTI ID: 7271849
• Journal Information: Journal of Chemical Physics; (United States), Journal Name: Journal of Chemical Physics; (United States) Vol. 96:5; ISSN JCPSA; ISSN 0021-9606
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606 -- Other Materials-- Physical Properties-- (1992-)
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical & Physicochemical Properties
ANIONS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHARGE CARRIERS
CHARGE EXCHANGE
CHARGED PARTICLES
CHEMICAL REACTIONS
CRYSTALS
ELEMENTS
ENERGY LEVELS
FERMI LEVEL
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOLES
INTERFACES
IONS
LAYERS
LIQUIDS
MATERIALS
METALS
MONOCRYSTALS
N-TYPE CONDUCTORS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
PULSES
SELENIUM IONS
SEMICONDUCTOR MATERIALS