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Peculiarities of the change in the charge-carrier mobility in gallium arsenide after quenching and irradiation by fast electrons

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6954180
In this work the authors studied the effect of electron irradiation on the change of the Hall mobility in undoped gallium arsenide crystals with a starting majority charge-carrier density of approximately 5.10/sup 15/ cm/sup -3/ and an electron mobility of -5000 cm/sup 2//(V. sec), subjected to heat treatment. For comparison, analogous data on crystals without heat treatment are also presented. It was shown that when undoped gallium arsenide single crystals are irradiated after heat treatment at 1270/sup 0/K with comparatively low irradiation dosages of 4-MeV electrons (up to approximately 2.10/sup 15/ electrons/cm/sup 2/) the Hall mobility of the electrons increases, after which the usual decrease of the mobility with increasing irradiation dosage is observed.
Research Organization:
Institute of Solid-State and Semiconductor Physics, Academy of Sciences of the Belorussian SSR
OSTI ID:
6954180
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:3; ISSN INOMA
Country of Publication:
United States
Language:
English

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