Self-damage in electron-beam-pumped gallium arsenide lasers

Journal Article · Mon Sep 01 04:00:00 EDT 1975 · Sov. J. Quant. Electron. (Engl. Transl.), v. 5, no. 9, pp. 1069-1074

DOI:https://doi.org/10.1070/QE1975v005n09ABEH011900· OSTI ID:4122403

Antoshin, M K; Krasavina, E M; Kryukova, I V; Sluev, V I; Spivak, G V

An investigation was made of catastrophic degradation of electron-beam- pumped gallium arsenide lasers operating at temperatures of 80 and 300degreeK. The critical radiation density in the semiconductor resonator resulting in its damage ranged from 2 to 15 MW/cm$sup 2$, depending on the temperature, optical homogeneity, and quality of the surface treatment of the crystal. An analysis was made of the mechanisms of the fracture of gallium arsenide crystals under the action of their own laser radiation. (AIP)

• Research Organization: All-Union Scientific Research Institute of Optophysical Measurements, Moscow
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-016967
• OSTI ID: 4122403
• Journal Information: Sov. J. Quant. Electron. (Engl. Transl.), v. 5, no. 9, pp. 1069-1074, Journal Name: Sov. J. Quant. Electron. (Engl. Transl.), v. 5, no. 9, pp. 1069-1074; ISSN SJQEA
• Country of Publication: United States
• Language: English

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