Single event induced charge transport modeling of GaAs MESFETs

Conference · Wed Dec 01 04:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6953173

Weatherford, T R; Knudson, A R ^[1]; McMorrow, D; Campbell, A B ^[2]; Curtice, W R ^[3]

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1. SFA Inc., Landover, MD (United States)
2. Naval Research Lab., Washington, DC (United States)
3. W.R. Curtice Consulting, Princeton Junction, NJ (United States)

Previous studies examining single event charge collection in GaAs MESFETs have revealed enhanced charge collection, in which the drain charge collection can be as high as 8 times the amount of charge deposited in the device. The understanding of these charge amplifying mechanisms requires correlation between experimental and simulation analysis. Two-dimensional computer simulations of charge collection phenomena in GaAs MESFETs have been performed for alpha and laser ionization. In both cases more charge is collected than is created by the ionizing event. The simulations indicate that a bipolar transport mechanism (t < 60 ps) and a channel modulation mechanism (t > 40 ps) are responsible for this enhanced charge collection.

• OSTI ID: 6953173
• Report Number(s): CONF-930704--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 40:6Pt1
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALPHA PARTICLES
CARRIER MOBILITY
CHARGED PARTICLES
DATA
ELECTROMAGNETIC RADIATION
FIELD EFFECT TRANSISTORS
INFORMATION
IONIZING RADIATIONS
LASER RADIATION
MOBILITY
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
THEORETICAL DATA
TRANSISTORS