Three-dimensional numerical simulation of single event upset of an SRAM cell

Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6953117

Woodruff, R L; Rudeck, P J ^[1]

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1. United Technologies Microelectronics Center, Colorado Springs, CO (United States)

Charge collection mechanisms in PMOS and NMOS transistors irradiated by single energetic heavy ions and the corresponding response of an SRAM cell have been simulated. For an ion track through a p-channel, the RC network within the cell and the strength of the n-channel pull-down device will limit the amount of charge collected. In the case of the n-channel pull-down device, the direction of the ion strike (toward or away from the source) plays a major role in the upset of the cell. An ion path toward the source upsets at a lower LET than one away from the source. This is the result of additional electrons injected from the source due to barrier lowering.

• OSTI ID: 6953117
• Report Number(s): CONF-930704--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPUTERIZED SIMULATION
DATA
INFORMATION
IONIZING RADIATIONS
MEMORY DEVICES
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SIMULATION
THEORETICAL DATA
THREE-DIMENSIONAL CALCULATIONS
TRANSISTORS