Mechanisms leading to single event upset

Technical Report · Mon Feb 29 23:00:00 EST 1988

OSTI ID:5823747

Axness, C L; Weaver, H T; Fu, J S; Koga, R; Kolasinski, W A

The SRAM cell recovery time following a 140 MeV Krypton strike on a Sandia SRAM is modeled using a two-dimensional transient numerical simulator and circuit code. Strikes at both n- and p-channel off drains are investigated. Four principle results are obtained. The recovery time after a strike is strongly dependent on the drive of the restoring transistor. A struck off p-channel drain-to-gate capacitive coupling has a significant effect on recovery in SRAM with feedback resistors. Recovery time is approximately linear with LET over LET in the range to 0.4 pC/micrometer. Finally, an experimental n-channel Single Event Upset (SEU) was observed in a Sandia SRAM without feedback resistors.

• Research Organization: Sandia Labs., Albuquerque, NM (USA)
• OSTI ID: 5823747
• Report Number(s): ATR-86(8139)-5
• Country of Publication: United States
• Language: English

Related Subjects

440104* -- Radiation Instrumentation-- High Energy Physics Instrumentation
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGED PARTICLES
COMPUTERIZED SIMULATION
ENERGY TRANSFER
FUNCTIONS
IONIZATION
LET
MATHEMATICAL MODELS
MEASURING INSTRUMENTS
RADIATION DETECTORS
RECOVERY
RESPONSE FUNCTIONS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS