Hydrogenation kinetics in oxidized boron-doped silicon irradiated by keV electrons
Hydrogenation kinetics of boron acceptors in oxidized silicon during and after repeated 8-keV electron irradiation (225--2700-..mu..C/cm/sup 2/ stresses and 10--168-h interirradiation anneals) at room temperature are reported. Hydrogenation proceeds rapidly during irradiation but continues for many hours after the 8-keV electron beam is removed. Postoxidation process dependencies show that postoxidation and postmetallization annealing processes reduce the hydrogenation effect during the 8-keV electron irradiation, while exposure of the oxide to water prior to aluminum electrode deposition enhances it. The data can be interpreted by our two-reaction model consisting of the hydrogen capture reaction by the boron acceptor and the hydrogen recombination reaction to form hydrogen molecule.
- Research Organization:
- Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 6952509
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:4; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Generation-annealing of interface traps and hydrogenation of boron acceptors in metal-oxide-silicon capacitors irradiated by kilo-volt electrons
Deactivation of group III acceptors in silicon during keV electron irradiation
Related Subjects
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
ALLOYS
BORON ADDITIONS
BORON ALLOYS
CAPACITORS
CHALCOGENIDES
COLLISIONS
DATA ANALYSIS
DEACTIVATION
ELECTRICAL EQUIPMENT
ELECTRON COLLISIONS
ELEMENTS
ENERGY RANGE
EQUIPMENT
INTERFACES
KEV RANGE
KEV RANGE 01-10
MEDIUM TEMPERATURE
METALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON