Effects of hydrogen chloride on boron acceptor hydrogenation and trap generation-annealing in oxidized silicon irradiated by keV electrons
The effects of hydrogen chloride (HCl) during oxidation of silicon on the hydrogenation of boron acceptors and generation-annealing of interface and oxide traps are reported in 8-keV electron irradiated aluminum/polycrystalline-silicon/oxide/silicon capacitors. This paper shows (i) boron acceptor hydrogenation also occurs during HCl oxidation, a new finding, (ii) boron acceptor hydrogenation continues after the electron beam was turned off, (iii) interfacial chlorine reduces hydrogen migration to the silicon surface layer, a result also previously observed in capacitors stressed by avalanche injected electrons, and (iv) HCl oxidation significantly reduces the generated and annealed densities of interface and oxide traps by the 8-keV electrons but increases their annealing rate at room temperatures.
- Research Organization:
- Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 5389039
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:9; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ALUMINIUM
ANNEALING
BORON
CHALCOGENIDES
CHEMICAL REACTIONS
COLLISIONS
CRYSTAL DOPING
CRYSTALS
ELECTRON COLLISIONS
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
HYDROCHLORIC ACID
HYDROGEN COMPOUNDS
HYDROGENATION
IMPURITIES
INORGANIC ACIDS
INTERFACES
KEV RANGE
KEV RANGE 01-10
LAYERS
METALS
MINERALS
OXIDATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
POLYCRYSTALS
RADIATION EFFECTS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SURFACES
TRAPPING
TRAPS