Hydrogenation and annealing kinetics of group-III acceptors in oxidized silicon exposed to keV electrons

Journal Article · Tue Jul 01 04:00:00 EDT 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337669· OSTI ID:5632426

Pan, S C; Sah, C

Group-III acceptors are deactivated by hydrogen released by 8 keV electrons in metal-oxide-silicon capacitors. The decay of the acceptor density during keV electron beam irradiation shows three conjoined phases: an initial delay, a short-time transient, and a long-time transient. This overlapping temporal characteristic is related to comparable rates of hydrogen bond breaking at the gate--oxide interface, hydrogen migration across the oxide, and emission and capture of proton at the group-III acceptor. Isothermal annealing data showed clearly two distinct annealing phases: an initial exponential rise and the long-time second-order recovery kinetics. The hydrogenation and annealing rate coefficients from these electron beam irradiated oxides are different from those obtained from avalanche electron injection (AEI) experiments. The difference suggests that the atomic structure surrounding the hydrogen-acceptor complex depends on the hydrogenation energetics. Compared with those electrons in the AEI experiments (tens eV), the higher-energy (keV) electrons can create more extended interfacial dangling bonds which are hydrogen or proton traps.

• Research Organization: Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, Illinois 61801
• OSTI ID: 5632426
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CHALCOGENIDES
CHEMICAL REACTIONS
COLLISIONS
ELECTRON COLLISIONS
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
HYDROGENATION
IMPURITIES
JUNCTIONS
KEV RANGE
KEV RANGE 01-10
MINERALS
OXIDATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES