Growth and properties of indium arsenide phosphide thin films and superlattices

Thesis/Dissertation · Thu Jan 01 04:00:00 EST 1987

OSTI ID:6952185

Wang, P J

Epitaxial growth and properties of InAsP alloy thin films and superlattices were studied. Hydride vapor-phase epitaxy was used to prepare these films. A new technique, flow-modulation epitaxy, suitable for growth of complex multilayer structures was developed. Structural properties of layers were examined by optical microscopy, x-ray diffraction, scanning-electron microscopy, and transmission-electron microscopy. Photoluminescence was used to study the near-band emissions of these layers. The transport properties of these layers were characterized by Hall and magnetotransport measurements. High-quality InAsP/InP and InAsP/InAs strained-layer superlattices were successfully grown in a modified hydride VPE system. Layer distortion in the superlattices was caused by a large lattice misfit strain. An upward shift of InAsP/InP superlattice near band photoluminescence emissions was observed. Room temperature mobility enhancement was obtained for InAsP/InP superlattices with carrier concentration greater than 2 x 10/sup 16/ cm/sup -3/. Localization and electron correlation effects in the two-dimensional electron gas dominate the transport properties of superlattices at low temperatures.

• Research Organization: Northwestern Univ., Evanston, IL (USA)
• OSTI ID: 6952185
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER MOBILITY
EPITAXY
FILMS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LUMINESCENCE
MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
SUPERLATTICES
THIN FILMS
VAPOR PHASE EPITAXY