Morphological Instability in InAs/GaSb Superlattices due to Interfacial Bonds

Journal Article · Fri Aug 26 04:00:00 EDT 2005 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.95.096104· OSTI ID:20699377

Li, J H; Moss, S C ^[1]; Stokes, D W; Caha, O; Bassler, K E ^[1]; Ammu, S L ^[1]; Bai, J ^[2]

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1. Department of Physics, University of Houston, Houston, Texas 77204-5005 (United States)
2. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds. It is found that the morphological instability that occurs in the nanowire array results from the large misfit strain that the InSb interfacial bonds have in the nanowire array. Based on this result, we propose that tailoring the type of interfacial bonds during the epitaxial growth of III-V semiconductor films provides a novel approach for producing the technologically important morphological instability in anomalously thin layers.

• OSTI ID: 20699377
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 9 Vol. 95; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EPITAXY
FILMS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
LAYERS
NANOSTRUCTURES
SEMICONDUCTOR MATERIALS
STRAINS
STRESSES
SUPERLATTICES
SYNCHROTRON RADIATION
X-RAY DIFFRACTION