Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-ray Diffraction Study

Journal Article · Fri Jan 01 04:00:00 EST 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3429100· OSTI ID:1019777

Li, J; Stokes, D; Wickett, J; Caha, O; Bassler, K; Moss, S

We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces (IFs). We show that the superlattice morphology, either planar or nanostructured, is dependent on the chemical bonds at the heterointerfaces. In both cases, the misfit strain has been determined for the superlattice layers and the IFs. We also determined how the magnitude and sign of this strain is crucial in governing the morphology of the superlattice. Our analysis suggests that the growth of self-assembled nanostructures may be extended to many systems generally thought to have too small a lattice mismatch.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: DOE - OFFICE OF SCIENCE
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 1019777
• Report Number(s): BNL--95623-2011-JA
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 107; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL BONDS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NANOSTRUCTURES
STRAINS
SUPERLATTICES
X-RAY DIFFRACTION
national synchrotron light source