Quantitative structural characterization of InAs/GaSb superlattices

Journal Article · Fri Sep 15 04:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2353732· OSTI ID:20884736

Ge, Liu; Fruhberger, Bernd; Schuller, Ivan K; Haugan, Heather J; Brown, Gail J ^[1]

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1. Department of Physics, University of California-San Diego, La Jolla, California 92093 (United States)

Molecular beam epitaxy grown InAs/GaSb superlattices, containing InSb-like interfacial layers, were analyzed by a combination of x-ray diffraction (XRD) and structural refinement. The superlattice refinement from x rays (SUPREX) method determines with high accuracy the average thicknesses and d spacings of the individual InAs and GaSb layers in addition to standard structural parameters usually obtained by XRD, such as the modulation length (periodicity), average out-of-plane interplanar spacings, and total thickness. The combined SUPREX/XRD experiments show that the absence of certain odd order satellite features in the x-ray data is due to asymmetric and inhomogeneous lattice strain.

• OSTI ID: 20884736
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 100; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ASYMMETRY
CRYSTAL GROWTH
GALLIUM ANTIMONIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
PERIODICITY
RESIDUAL STRESSES
SEMICONDUCTOR MATERIALS
SUPERLATTICES
X-RAY DIFFRACTION