Studies of lattice distortion and crystal curvature in arsenic-implanted silicon

Journal Article · Mon Aug 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341777· OSTI ID:6952149

Kuo, C L; Kao, Y H; Arnold, E; Bilello, J C

The lattice distortion and crystal curvature in arsenic-implanted silicon wafers are investigated using a technique of double-crystal topography. In this study, a method for quantitative determination of the curvature of asymmetric crystal reflection planes as well as the concavity of specimens is demonstrated. Measurements of samples with different arsenic-implantation fluences indicate that all the crystal surfaces are convex and the radius of curvature decreases with increasing arsenic fluence. Effects of thermal annealing are shown to result in a reduction of the crystal curvature and local lattice distortion.

• Research Organization: School of Engineering and Computer Science, California State University, Fullerton, California 92634
• OSTI ID: 6952149
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ANNEALING
ARSENIC IONS
CHARGED PARTICLES
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
IONIZING RADIATIONS
IONS
LATTICE PARAMETERS
RADIATIONS
SEMIMETALS
SILICON
TOPOGRAPHY
X RADIATION