Energy dependence of transient-enhanced-diffusion in low energy high dose arsenic implants in silicon
Conference
·
OSTI ID:621299
- Univ. of Florida, Gainesville, FL (United States)
- North Carolina State Univ., Raleigh, NC (United States)
Si wafers were implanted with As at energies ranging from 10-50keV to a constant dose of 5e15/cm{sup 2} and annealed at 700{degrees}C for various times to study transient-enhanced-diffusion of arsenic and its correlation to the defect microstructure. The results showed that the diffusion enhancement was maximum after a 30keV implant and anneal. The defect microstructure consisted of only end of range damage in the 10 and 20keV specimens while the 30, 40 and 50keV implanted/annealed specimens contained both end of range and projected range defects. An explanation for these observations is suggested, after taking into account a combination of factors that include arsenic precipitation, arsenic clustering and point defect annihilation at the surface.
- OSTI ID:
- 621299
- Report Number(s):
- CONF-9606110--
- Country of Publication:
- United States
- Language:
- English
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