Effects of arsenic deactivation on arsenic-implant induced enhanced diffusion in silicon

Book · Tue Dec 31 00:00:00 EST 1996

OSTI ID:477389

Dokumaci, O; Law, M E ^[1]; Krishnamoorthy, V; Jones, K S ^[2]

---

1. Univ. of Florida, Gainesville, FL (United States). Dept. of Electrical Engineering
2. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science

The enhanced diffusion of boron due to high dose arsenic implantation into silicon is studied as a function of arsenic dose. The behavior of both the type-V and end-of-range loops is investigated by transmission electron microscopy (TEM). The role of arsenic deactivation induced interstitials and type-V loops on enhanced diffusion is assessed. Reduction of the boron diffusivity is observed with increasing arsenic dose at three different temperatures. The possible explanations for this reduction are discussed.

• OSTI ID: 477389
• Report Number(s): CONF-951155-; ISBN 1-55899-299-5; TRN: 97:009404
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Ion-solid interactions for materials modification and processing; Poker, D.B. [ed.] [Oak Ridge National Lab., TN (United States)]; Ila, D. [ed.] [Alabama A and M Univ., Normal, AL (United States)]; Cheng, Y.T. [ed.] [General Motors Corp., Warren, MI (United States)]; Harriott, L.R. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Sigmon, T.W. [ed.] [Arizona State Univ., Tempe, AZ (United States)]; PB: 923 p.; Materials Research Society symposium proceedings, Volume 396
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHYSICAL RADIATION EFFECTS
ARSENIC IONS
DIFFUSION
BORON
ION IMPLANTATION
CRYSTAL DEFECTS
EXPERIMENTAL DATA