Light-induced effects on doped- and undoped-hydrogenated amorphous silicon

Journal Article · Mon Aug 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341720· OSTI ID:6952092

Park, J; Han, M; Lee, C

This article presents the light-induced effects on the electrical and optical properties of undoped- and doped-hydrogenated amorphous silicon films. The changes in the conductivities and the activation energies of various types of a-Si:H films due to the prolonged exposure to light have been characterized as a function of deposition conditions and illumination periods. We have also analyzed the variations of microstructure of a-Si:H film such as silicon--hydrogen bondings in the rocking and stretching modes utilizing infrared spectroscopy. From the experimental results, it is clear that doping effects must be crucial to the degradations of the fundamental properties of a-Si:H due to light-induced effects.

• Research Organization: Department of Electrical Engineering, Seoul National University, Seoul, Korea
• OSTI ID: 6952092
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
HYDROGEN ADDITIONS
MICROSTRUCTURE
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
SPECTRA
VISIBLE SPECTRA