Annealing behavior of light-induced defects in boron-doped hydrogenated amorphous silicon alloys

Journal Article · Sat Jun 15 00:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.334835· OSTI ID:5586063

den Boer, W; Guha, S

Light-induced effects in lightly boron-doped hydrogenated amorphous silicon alloys have been studied in coplanar and sandwich sample configurations. It is observed that metastable changes in these films anneal out at a significantly lower temperature (< or = 100 /sup 0/C) than in undoped films.

• Research Organization: Energy Conversion Devices, Incorporated, 1675 West Maple Road, Troy, Michigan 48084
• OSTI ID: 5586063
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 57:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
ANNEALING
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ENERGY LEVELS
EXCITED STATES
HEAT TREATMENTS
MEDIUM TEMPERATURE
METASTABLE STATES
PHASE TRANSFORMATIONS
PHOTOCONDUCTIVITY
PHOTON COLLISIONS
PHYSICAL PROPERTIES
SILICON ALLOYS