Effects of annealing on hydrogen microstructure in boron-doped and undoped rf-sputter-deposited amorphous silicon
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
- Ames Laboratory and Physics and Astronomy Department, Iowa State University, Ames, Iowa 50011 (United States)
A detailed study of changes in hydrogen microstructure in rf-sputter-deposited undoped and boron-doped hydrogenated amorphous silicon was undertaken. The boron-doped samples were prepared under identical conditions with the same hydrogen content, and then characterized by IR absorption and [sup 1]H NMR before and after annealing. It is found that an increase in the boron concentration leads to increased segregation of hydrogen. Annealing leads to evolution of the hydrogen microstructure. This change, however, depends on the boron content of the films. After a moderate anneal, the hydrogen microstructure is found to evolve to the same state and seems to be independent of the boron content of the films.
- DOE Contract Number:
- W-7405-ENG-82
- OSTI ID:
- 6345522
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 48:4; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
ALLOYS
AMORPHOUS STATE
ANNEALING
BORON ADDITIONS
BORON ALLOYS
CRYSTAL STRUCTURE
DOPED MATERIALS
ELEMENTS
FILMS
HEAT TREATMENTS
HYDROGEN ADDITIONS
MATERIALS
MICROSTRUCTURE
SEGREGATION
SEMIMETALS
SILICON
SPUTTERING
THIN FILMS