Evidence for structural relaxation in measurements of hydrogen diffusion in rf-sputtered boron-doped a -Si:H
- Ames Laboratory-U.S. Department of Energy, Ames, IA (USA) Physics Department, Iowa State University, Ames, IA (USA)
- Microelectronics Research Center, Iowa State University, Ames, IA (USA)
- Ames Laboratory-U.S. Department of Energy and Physics Department, Iowa State University, Ames, IA (USA)
H diffusion in boron-doped rf-sputter-deposited hydrogenated amorphous Si ({ital a}-Si:H) was measured by secondary ion mass spectrometry profiles of deuterium in annealed {ital a}-Si:H/{ital a}-Si:(H,D)/{ital a}-Si:H multilayers. The exponent {alpha}=0.7{plus minus}0.1 of the diffusion constant {ital D}({ital t}) ={ital D}{sub 00}({omega}{ital t}){sup {minus}{alpha}} strongly decreases after annealing for {approximately}50 h at 180 {degree}C and {approximately}35 h at 225 {degree}C. It then increases to {approximately}0.8--1, i.e., the diffusion is nearly quenched, at longer annealing periods extending up to 1100 h. This behavior is believed to result from modifications in the microvoid system related to structural relaxation of the Si network.
- DOE Contract Number:
- W-7405-ENG-82
- OSTI ID:
- 6171743
- Journal Information:
- Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 42:10; ISSN 0163-1829; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ALLOYS
AMORPHOUS STATE
ANNEALING
ATOM TRANSPORT
BORON ADDITIONS
BORON ALLOYS
CRYSTAL STRUCTURE
DIFFUSION
ELEMENTS
HEAT TREATMENTS
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
MICROSTRUCTURE
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
RADIATION TRANSPORT
RELAXATION
SILANES
SILICON COMPOUNDS
SPUTTERING
VOIDS