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Hydrogen dynamics in a -Si:H: Multiple trapping, structural relaxation, and the Meyer-Neldel relation

Journal Article · · Physical Review, B: Condensed Matter; (USA)
 [1];  [2]; ;  [1];  [2]
  1. Ames Laboratory, U. S. Department of Energy and Department of Physics, Iowa State University, Ames, IA (USA)
  2. Microelectronics Research Center, Iowa State University, Ames, IA (USA)

The power-law time-dependent diffusion constant {ital D}({ital t})={ital D}{sub 00}({omega}{ital t}){sup {minus}{alpha}} was measured in undoped hydrogenated amorphous silicon of varying H content (H{sub {ital t}}), diffusion length {ital L}, and microvoid content at temperatures {ital T}{le}400 {degree}C. {alpha} generally deviates from a 1{minus}{ital T}/{ital T}{sub 0} dependence on the temperature {ital T}. The temperature dependence of {ital D}({ital t}{sub {ital L}}), for constant {ital L}, thus deviates from an Arrhenius behavior. The apparent'' activation energy {ital E}{sub {ital a}} and prefactor {ital D}{sub 0}, defined by the linear best fit of ln{ital D}({ital t}{sub {ital L}}) versus 1/{ital T}, strongly increase with {ital L} at low (H{sub {ital t}}). The Meyer-Neldel relation {ital D}{sub 0} ={ital A}{sub 00} exp({ital E}{sub {ital a}}/{ital kT}{sub 0}{sup {prime}}), where {ital A}{sub 00}{congruent}3.1{times}10{sup {minus}14} cm{sup 2}/s and {ital T}{sub 0}{sup {prime}}{congruent}30 K, holds for all 1.3{le}{ital E}{sub {ital a}}{le}2.4 eV and 2.5{times}10{sup {minus}5}{le}{ital D}{sub 0}{le}3100 cm{sup 2}/s. Structural relaxation processes dependent on H content are believed to affect {alpha}. The nature of the microvoid-related deep H-trapping sites is also discussed.

DOE Contract Number:
W-7405-ENG-82
OSTI ID:
6114292
Journal Information:
Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:2; ISSN 0163-1829; ISSN PRBMD
Country of Publication:
United States
Language:
English