Hydrogen dynamics in a -Si:H: Multiple trapping, structural relaxation, and the Meyer-Neldel relation
- Ames Laboratory, U. S. Department of Energy and Department of Physics, Iowa State University, Ames, IA (USA)
- Microelectronics Research Center, Iowa State University, Ames, IA (USA)
The power-law time-dependent diffusion constant {ital D}({ital t})={ital D}{sub 00}({omega}{ital t}){sup {minus}{alpha}} was measured in undoped hydrogenated amorphous silicon of varying H content (H{sub {ital t}}), diffusion length {ital L}, and microvoid content at temperatures {ital T}{le}400 {degree}C. {alpha} generally deviates from a 1{minus}{ital T}/{ital T}{sub 0} dependence on the temperature {ital T}. The temperature dependence of {ital D}({ital t}{sub {ital L}}), for constant {ital L}, thus deviates from an Arrhenius behavior. The apparent'' activation energy {ital E}{sub {ital a}} and prefactor {ital D}{sub 0}, defined by the linear best fit of ln{ital D}({ital t}{sub {ital L}}) versus 1/{ital T}, strongly increase with {ital L} at low (H{sub {ital t}}). The Meyer-Neldel relation {ital D}{sub 0} ={ital A}{sub 00} exp({ital E}{sub {ital a}}/{ital kT}{sub 0}{sup {prime}}), where {ital A}{sub 00}{congruent}3.1{times}10{sup {minus}14} cm{sup 2}/s and {ital T}{sub 0}{sup {prime}}{congruent}30 K, holds for all 1.3{le}{ital E}{sub {ital a}}{le}2.4 eV and 2.5{times}10{sup {minus}5}{le}{ital D}{sub 0}{le}3100 cm{sup 2}/s. Structural relaxation processes dependent on H content are believed to affect {alpha}. The nature of the microvoid-related deep H-trapping sites is also discussed.
- DOE Contract Number:
- W-7405-ENG-82
- OSTI ID:
- 6114292
- Journal Information:
- Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:2; ISSN 0163-1829; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ACTIVATION ENERGY
AMORPHOUS STATE
ATOM TRANSPORT
DIFFUSION
DYNAMICS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
INFRARED RADIATION
LAYERS
MECHANICS
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
RADIATION TRANSPORT
RADIATIONS
RELAXATION
SILANES
SILICON COMPOUNDS
TIME DEPENDENCE
TRAPPING
VOIDS