Hydrogen diffusion and desorption in rf-sputter-deposited hydrogenated amorphous germanium

Journal Article · Sun Sep 15 00:00:00 EDT 1991 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.44.6161· OSTI ID:5154270

Wu, X L; Shinar, J ^[1]; Shinar, R ^[2]

---

1. Ames Lab., IA (United States) Iowa State Univ. of Science and Technology, Ames, IA (United States). Dept. of Physics and Astronomy
2. Iowa State University, Ames, Iowa (USA). Microelectronics Research Center

Long-range hydrogen motion and desorption at temperatures 180{le}{ital T}{le}310 {degree}C in rf-sputter-deposited hyrogenated amorphous germanium ({ital a}-Ge:H) of varying Ge-bonded H content {ital C}{sub H} was studied by secondary-ion mass spectrometry (SIMS) and ir absorption. As in hydrogenated amorphous silicon ({ital a}-Si:H), the diffusion constant {ital D}({ital t}) decreases with time as {ital D}{sub 00}({omega}{ital t}){sup {minus}{alpha}}. In films of initial H content 5.0{le}{ital C}{sub H0}{le}7.4 at. %, {alpha}{congruent}0.40 is independent of {ital T} and {ital C}{sub H0}. In a film of {ital C}{sub H0}{congruent}9.5 at. %, suspected to contain a significant microvoid content, {alpha}{congruent}0.65 is also independent of {ital T}. In contrast to undoped {ital a}-Si:H, {ital C}{sub H} decreases during annealing at temperatures as low as 180 {degree}C. H diffusion to the nearest microvoid and molecular recombination at its surface are therefore suspected to strongly affect the value of {alpha}.

• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 5154270
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:12; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ACTIVATION ENERGY
AMORPHOUS STATE
ANNEALING
ATOM TRANSPORT
CHEMICAL REACTIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DESORPTION
DIFFUSION
ELEMENTS
ENERGY
GERMANIUM
HEAT TREATMENTS
HYDROGEN
HYDROGENATION
LOW TEMPERATURE
MEDIUM TEMPERATURE
METALS
MICROSTRUCTURE
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
RADIATION TRANSPORT
SORPTIVE PROPERTIES
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
VOIDS