Preparation and characterization of boron- and phosphorus-doped hydrogenated amorphous silicon nitride films

Journal Article · Wed May 01 00:00:00 EDT 1985 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2114071· OSTI ID:6302931

Fang, Y K; Chang, C Y; Huang, C F; Lee, R H

Hydrogenated amorphous silicon nitride (a-SiN) films were deposited on silicon wafers by plasma-enhanced chemical vapor deposition and in situ doped with boron or phosphorus. Film properties, including both wet and dry etching rate, refractive index, dielectric constant, breakdown strength, dc resistivity, and pinhole density vs. doping percentage were systematically investigated and compared with the undoped films. It has been found that the films with doping concentrations around 2-3% exhibit the best film quality, which drastically deteriorate when the doping concentrations are beyond 6%.

• Research Organization: Semiconductor and System Laboratories, National Cheng Kung University, Tainan
• OSTI ID: 6302931
• Journal Information: J. Electrochem. Soc.; (United States), Vol. 132:5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SEMICONDUCTOR DEVICES
FABRICATION
SILICON NITRIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL DOPING
AMORPHOUS STATE
BORON
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
ETCHING
HYDROGENATION
PHOSPHORUS
REFRACTION
SILICON
THIN FILMS
CHEMICAL COATING
CHEMICAL REACTIONS
DEPOSITION
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
SILICON COMPOUNDS
SURFACE COATING
SURFACE FINISHING
360601* - Other Materials- Preparation & Manufacture