Novel passivation dielectrics-The boron- or phosphorus-doped hydrogenated amorphous silicon carbide films

Journal Article · Fri Feb 01 04:00:00 EST 1985 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2113855· OSTI ID:6343668

Chang, C Y; Fang, Y K; Huang, C F; Wu, B S

Hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared and studied in a radiofrequency glowdischarge system, using a gas mixture of SiH/sub 4/ and one of the following carbon sources: methane (CH/sub 4/), benzene (C/sub 6/H/sub 6/), toluene (C/sub 7/H/sub 8/), sigma-xylene (C/sub 8/H/sub 10/), trichloroethane (C/sub 2/H/sub 3/Cl/sub 3/), trichloroethylene (C/sub 2/HCl/sub 3/), or carbon tetrachloride (CCl/sub 4/). The effect of doping phosphorus and boron into those a-SiC:H films on chemical etching rate, electrica dc resistivity, breakdown strength, and optical refractive index have been systematically investigated. Their chemical etching properties were examined by immersing in 49% HF, buffered HF, 180/sup 0/C H/sub 3/PO/sub 4/ solutions, or in CF/sub 4/ + O/sub 2/ plasma. It was found that the boron-doped a-SiC:H film possesses five times slower etching rate than the undoped one, while phosphorus-doped a-SiC:H film shows about three times slower. Among those a-SiC:H films, the one obtained from a mixture of SiH/sub 4/ and benzene shows the best etch-resistant property, while the ones obtained from a mixture of SiH/sub 4/ and chlorine containing carbon sources (e.g., trichloroethylene, trichloroethane, or carbon tetrachloride) shows that they are poor in etching resistance (i.e., the etching rate is higher). By measuring dc resistivity, dielectric breakdown strength, and effective refractive index, it was found that boron- or phosphorus-doped a-SiC:H films exhibit much higher dielectric strength and resistivity, but lower etching rate, presumably because of higher density.

• Research Organization: Department of Electrical and Computer Engineering, National Cheng Kung University, Tainan
• OSTI ID: 6343668
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 132:2; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400400 -- Electrochemistry
ALKANES
ALKENES
ALKYLATED AROMATICS
AMORPHOUS STATE
AROMATICS
BENZENE
BORON
CARBIDES
CARBON COMPOUNDS
CARBON TETRACHLORIDE
CHEMICAL REACTIONS
CHEMISTRY
CHLORINATED ALIPHATIC HYDROCARBONS
CRYSTAL DOPING
DIELECTRIC PROPERTIES
DOPED MATERIALS
ELECTRIC DISCHARGES
ELECTRICAL PROPERTIES
ELECTROCHEMISTRY
ELEMENTS
ETCHING
ETHANE
ETHYLENE
FILMS
GLOW DISCHARGES
HALOGENATED ALIPHATIC HYDROCARBONS
HYDRIDES
HYDROCARBONS
HYDROGEN COMPOUNDS
HYDROGENATION
MATERIALS
MATERIALS TESTING
METHANE
NONMETALS
ORGANIC CHLORINE COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC HALOGEN COMPOUNDS
ORGANIC SILICON COMPOUNDS
PASSIVATION
PHOSPHORUS
PHYSICAL PROPERTIES
RF SYSTEMS
SEMIMETALS
SILANES
SILICON CARBIDES
SILICON COMPOUNDS
SURFACE FINISHING
TESTING
THIN FILMS
TOLUENE
XYLENES