Contact resistance to undoped and phosphorus-doped hydrogenated amorphous silicon films

Journal Article · Mon Nov 14 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100330· OSTI ID:6728578

Kanicki, J

An extensive systematic study of contact properties to as-deposited undoped and phosphorus-doped hydrogenated amorphous silicon (a-Si:H) in metal/a-Si:H diode configuration has shown that the magnitude of the contact resistance can be adjusted to some degree by the proper choice of metal work function. It is also obvious from our experimental data that the film doping (or bulk resistivity) is the most important factor in controlling the value of contact resistance for a given metallization. The lowest contact resistance values for both undoped and doped films have been achieved for Eu, Y, Sc, and Mg. Reasonable values for heavily doped films have also been obtained for Ti, Ta, Mo, and Al contacts. We have also shown, for the first time, that a further decrease of contact resistance can be achieved by increasing the doping efficiency of the phosphorus-doped layer.

• Research Organization: IBM Research Division, Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
• OSTI ID: 6728578
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:20; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ALKALINE EARTH METALS
ALUMINIUM
AMORPHOUS STATE
CRYSTAL DOPING
DATA
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
EUROPIUM
EXPERIMENTAL DATA
FABRICATION
FUNCTIONS
INFORMATION
INTERFACES
MAGNESIUM
METALS
MOLYBDENUM
NONMETALS
NUMERICAL DATA
PHOSPHORUS
PHYSICAL PROPERTIES
RARE EARTHS
SCANDIUM
SEMIMETALS
SILICON
TANTALUM
TITANIUM
TRANSITION ELEMENTS
WORK FUNCTIONS
YTTRIUM