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Contact resistance measurements for hydrogenated amorphous silicon solar cell structures

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.336431· OSTI ID:6313736
A technique for measuring the electrical characteristics of contacts to doped hydrogenated amorphous silicon (a-Si:H) or other high-resistivity thin-film semiconductors is developed. Experimental results for metal and conductive transparent oxide contacts to both n- and p-type a-Si:H are presented and the significance of these values to solar cell applications discussed.
Research Organization:
RCA Laboratories, Princeton, New Jersey 08540
OSTI ID:
6313736
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 59:5; ISSN JAPIA
Country of Publication:
United States
Language:
English