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Incorporation of ENDF-V neutron cross section data for calculating neutron-induced single event upsets

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
OSTI ID:6948193
;  [1]
  1. Boeing Aerospace and Electronics, Seattle, WA (US)

The burst generation rate method of calculating neutron-induced SEUs due to recoils has been expanded to utilize all relevant ENDF-V neutron cross section data for silicon. This enables more accurate calculation of the production rate of SEUs. This analysis method, when applied to upset rates in the 93L422 SRAM by neutrons in the upper atmosphere, gives approximately 3 {times} 10{sup 6} upset/bit-day, while earlier methods give a rate twice as large at higher altitudes.

OSTI ID:
6948193
Report Number(s):
CONF-890723--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English