Bipolar trends
The development of bipolar technology in recent years is reviewed, and trends for future development are projected. The developments clearly point to three salient features of today's advanced bipolar transistors, namely i) self-aligned structure, ii) deep-trench isolation, and iii) polysilicon emitter contact. Both i) and ii) allow advanced bipolar devices to have much higher circuit density and lower power-delay product than without these features. The polysilicon emitter contact allows bipolar devices to be scaled down vertically without suffering from problems of insufficient current gain or low emitter-collector punchthrough voltage. It is clear that while progress will continue in scaling the familiar high-speed ECL logic and memory, the integration level of these very high-speed chips is severely limited by the accompanied power dissipation. One seemingly promising and yet relatively unexplored direction is to increase the integration level by taking advantage of circuits with much lower power-delay product than ECL, such as NTL, TTL, CML, and MTL to improve the functional throughput. The technology challenges as well as the potential of submicrometer bipolar technology are also discussed.
- Research Organization:
- IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
- OSTI ID:
- 6942925
- Journal Information:
- Proc. IEEE; (United States), Journal Name: Proc. IEEE; (United States) Vol. 74:12; ISSN IEEPA
- Country of Publication:
- United States
- Language:
- English
Similar Records
On the low-temperature static and dynamic properties of high-performance silicon bipolar transistors
An experimental soft-error-immune 64-kbit 3-ns ECL bipolar RAM
Related Subjects
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
99 GENERAL AND MISCELLANEOUS
990200 -- Mathematics & Computers
ALIGNMENT
AMPLIFICATION
DESIGN
ELECTRIC POTENTIAL
ELECTRONIC CIRCUITS
ELEMENTS
GAIN
INTEGRATED CIRCUITS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TECHNOLOGY ASSESSMENT
TRANSISTORS