On the low-temperature static and dynamic properties of high-performance silicon bipolar transistors

Journal Article · Tue Aug 01 00:00:00 EDT 1989 · IEEE (Institute of Electrical and Electronics Engineers) Transactions on Electron Devices; (USA)

DOI:https://doi.org/10.1109/16.30962· OSTI ID:5366476

Cressler, J D; Tang, D D; Jenkins, K A; Li, G P ^[1]; Yang, E S ^[2]

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1. International Business Machines Corp., Yorktown Heights, NY (USA). Thomas J. Watson Research Center
2. Columbia Univ., New York, NY (USA). Dept. of Electrical Engineering

The authors present a detailed investigation of the static and dynamic properties of high-performance silicon bipolar transistors in the temperature range of 400 to 77 {Kappa}. Transistors are round to have near-ideal characteristics at low temperatures with {beta} as high as 80 at 77 {Kappa}. Detailed calculations indicate that the conventional theory of the temperature dependence {beta} does not match their data. This discrepancy can be removed if they assume that a phenomenological thermal barrier to hole injection is present. ECL ring oscillators are functional at 85 {Kappa} with no degradation in speed until about 165 {Kappa} when compared to 358 {Kappa} (85{sup 0}C). Calculations using a delay figure of merit indicate that f/sub T/, R/sub b/, and C/sub c/ are the delay components most affected by low-temperature operation. The feasibility of reduced logic swing operation of bipolar circuits at low temperatures is examined. They find that successful ECL circuit operation at reduced logic swings is possible provided emitter resistance is kept small and can be used to enhance low-temperature power-delay performance. Together, these data suggest that conventionally designed high-performance bipolar devices may be suitable for the low-temperature environment.

• OSTI ID: 5366476
• Journal Information: IEEE (Institute of Electrical and Electronics Engineers) Transactions on Electron Devices; (USA), Journal Name: IEEE (Institute of Electrical and Electronics Engineers) Transactions on Electron Devices; (USA) Vol. 36:8; ISSN 0018-9383; ISSN IETDA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
420400 -- Engineering-- Heat Transfer & Fluid Flow
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
CALCULATION METHODS
DATA ANALYSIS
DESIGN
DYNAMICS
ELECTRON-HOLE COUPLING
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
JUNCTION TRANSISTORS
LOW TEMPERATURE
MECHANICS
OSCILLATORS
PERFORMANCE
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
TRANSISTORS