An experimental soft-error-immune 64-kbit 3-ns ECL bipolar RAM

Journal Article · Sun Oct 01 00:00:00 EDT 1989 · IEEE Journal of Solid-State Circuits (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/JSSC.1989.572620· OSTI ID:6924000

Yamaguchi, K; Nanbu, H; Kanetani, K; Homma, N; Nakamura, T ^[1]; Ohhata, K ^[2]; Uchida, A; Ogiue, K ^[3]

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1. Central Research Lab., Hitachi Ltd., Kokubunji, Tokyo (JP)
2. Hitachi Device Engineering Co. Ltd., Mobara, Chiba (JP)
3. Device Development Center, Hitachi, Ltd., Ohme, Tokyo (JP)

An experimental soft-error-immune 64-kbit 3-ns ECL RAM has been developed. This high performance is achieved by using a soft-error-immune switched-load-resistor memory cell with clamp transistors, an upward-transistor decoder utilizing a sidewall-base contact structure (SICOS) upward transistor for the AND gate, a Darlington word driver with advanced discharge circuits, and 0.8 {mu}m SICOS technology. High-load and low-load resistors in this new memory cell are formed by suing double-layer polysilicon for the base and emitter electrodes in the SICOS structure. This results in a small cell size (498 {mu}m{sup 2}) and a reasonable chip size (85.8 mm{sup 2}). An accelerated soft-error test using americium alpha source shows that the new 64-kbit RAM has sufficient soft-error immunity, in spite of its small cell capacitance which is about one third that of conventional RAM's. In addition to the new memory cell, the upward-transistor decoder and the Darlington word driver with advanced discharge circuits make it possible to realize a high-speed, large-capacity bipolar RAM, while maintaining soft-error immunity.

• OSTI ID: 6924000
• Journal Information: IEEE Journal of Solid-State Circuits (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Journal of Solid-State Circuits (Institute of Electrical and Electronics Engineers); (USA) Vol. 24:5; ISSN IJSCB; ISSN 0018-9200
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ACTINIDES
ALPHA SOURCES
AMERICIUM
DATA
DESIGN
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
INFORMATION
ION SOURCES
MEMORY DEVICES
METALS
NUMERICAL DATA
PARTICLE SOURCES
PERFORMANCE
RADIATION SOURCES
RESISTORS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
THERMIONIC EMITTERS
TRANSISTORS
TRANSPLUTONIUM ELEMENTS
TRANSURANIUM ELEMENTS